Abstract
The intersubband scattering rate for wurtzite (WZ) strain-compensated InGaN/InAlN quantum well (QW) structures grown on GaN substrate is investigated theoretically as functions of the sheet carrier density. The intersubband scattering rate of the strain-compensated InGaN/InAlN QW structure is found to be slightly smaller than that of the conventional GaN/AlN QW structure. The intersubband relaxation time for electron gradually increases with increasing carrier density. This can be explained by the fact that the inverse screening length becomes large owing to an increased quasi-Fermi level. The strain-compensated InGaN/InAlN QW structure shows larger relaxation time than conventional GaN/AlN QW structure.
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