Abstract
We demonstrate intersubband polaritons at very short wavelengths, down to λ ∼ 2 μm, using a mature semiconductor material system InAs/AlSb and a metal-insulator-metal resonator architecture. The demonstration is given for intersubband transitions centered at 350 meV (λ = 3.54 μm) and 525 meV (λ = 2.36 μm). The polaritonic dispersions are measured at room-temperature and minimum splittings (Rabi splitting) of ≈50 meV are observed. We also quantitatively show that non-parabolicity effects limit the Rabi energy that can be obtained and must be crucially taken into account to correctly model these devices. Intersubband polaritons operating in the short-wave infrared region could enable the use of extremely effective pump laser sources in the quest for an intersubband polariton laser.
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