Abstract
The effect of an intense THz irradiation on the relative intersubband absorption ofelectrons in stepped quantum wells of GaAs–GaAlAs is theoretically studied. Analyticalexpressions for the induced current are obtained by means of the adiabatic and resonantapproximations within the matrix density formalism. This method allows one to predict thepresence of a marked fine structure on the absorption, together with a shift and broadeningof the absorption peaks, when the pump intensity is around the megawatts level.
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