Abstract
The effect of an intense THz irradiation on the relative intersubband absorption ofelectrons in stepped quantum wells of GaAs–GaAlAs is theoretically studied. Analyticalexpressions for the induced current are obtained by means of the adiabatic and resonantapproximations within the matrix density formalism. This method allows one to predict thepresence of a marked fine structure on the absorption, together with a shift and broadeningof the absorption peaks, when the pump intensity is around the megawatts level.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
