Abstract
Optical mid‐infrared (MIR) gain in n‐doped tunnel‐coupled semiconductor quantum well structures is studied at a sample temperature of 20 K. The structure is excited via the e1‐e3, intersubband transition by an ultrashort MIR pulse and the gain at the e2‐e3 transition frequency is monitored by a second time‐delayed tunable pulse in the MIR. At high pump intensities, even a narrow MIR emission band is found at the e2‐e3 transition frequency.
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