Abstract
The bound–bound, bound–free and free–free intersubband optical transitions are considered in semiconductor quantum wells derived from the Pöschl–Teller potential with a constant electron mass. To make this type of Hamiltonian effectively realizable in ternary (Al x Ga 1− x As) alloys, where the effective electron mass necessarily varies, just as does the potential, the coordinate transform method was employed to design variable-mass variable-potential structures realizable in Al x Ga 1− x As, with their Hamiltonians fully equivalent to the constant-mass Pöschl–Teller case. Applications of this special QW profile for photodetectors operating in the infrared are analyzed and the results are compared to those obtained in the simple square wells.
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