Interpretation of mechanism determining field effect mobility in a-Si:H TFT based on surface reaction model

Abstract

The dependence of field effect mobility in thin film transistors (TFTs) on deposition conditions of active a-Si:H layers, i.e., rf power, gas flow rate and gas pressure, was studied. The mechanism determining the mobility has been studied in relation to the film growth conditions of a-Si:H and interpreted in terms of the surface reaction model. As an alternative material to a-Si:H, microcrystalline Si was applied to TFTs and the characteristics were compared to a-Si:H TFTs.