Abstract

Dual Beam Optical Modulation (DBOM) is a useful tool for the measurement of carrier lifetime in semiconductors. The method is usually applied to bulk semiconductor only. This paper discusses how device simulation approach can be used to interpret results of the method applied to the thin film CuInSe/sub 2/ solar cell. In these materials the simple theory typically based on minority carrier diffusion equation and used to interpret the DBOM measurement is no longer valid. The paper shows that detailed numerical device simulation can be used to provide interpretation of the DBOM measurement of solar cell carrier lifetime. The results prove that majority carrier depletion region shrink is the main factor observed in these measurements.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.