Interpretation of Dominant Impurities in Cu Films by Secondary Ion Mass Spectrometry and Glow Discharge Mass Spectrometry

Abstract

Cu films were deposited on Si (100) substrates at substrate bias voltages of 0 V and -50 V by non-mass separated ion beam deposition. SIMS and GDMS were used to determine the impurity concentrations of a Cu target and Cu films. According to the quantitative GDMS results, many unknown peaks observed in the SIMS spectra of the Cu films were assigned to cluster states such as CxHx, OxHx, and CxOxHx. Moreover, it was found that the dominant impurities in the films were H, C, N, and O elements.