Interposer fabrication with annular copper TSV and multi-layered redistribution layer

Abstract

This paper proposes an interposer fabrication methods with annular copper through-silicon via (TSV) and multi-layered redistribution layer. Additives, current density, forced convection and environment temperature are taken into consideration in order to realize the equal-wall annular TSV filling. A multi-layered redistribution layer is fabricated on the front-side of interposer employing electroplating process and photolithographic process. Benzocyclobutene is used as the interlayer dielectric layer. A given number of interposer samples with annular copper TSV and multi-layered redistribution layer are fabricated. X-ray inspection and cross section observation are carried out to support the good quality of this proposed interposer integration approach.