Abstract
Spontaneous ${\mathrm{CuPt}}_{\mathit{B}}$-type ordering along 〈111〉 can reduce the crystal symmetry in ${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$${\mathrm{In}}_{\mathit{x}}$P, splitting the valence-band maximum and introducing optical anisotropy in the interband transition-matrix elements. The growth of lattice-mismatched layers also reduces the symmetry. We present a simple model to describe the combined influence of strain and ordering on the valence-band maximum. We calculate that the valence-subband dispersion and optical-matrix elements are strongly anisotropic over a significant energy range in ${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$${\mathrm{In}}_{\mathit{x}}$P quantum wells with coexistent epitaxial strain and [1\ifmmode\bar\else\textasciimacron\fi{}11] chemical ordering, using the simple model to explain the observed results. Comparison with disordered, unstrained quantum wells indicates that a combination of chemical ordering and strain may lead to significantly improved gain characteristics in high-quality ${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$${\mathrm{In}}_{\mathit{x}}$P layers.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.