Abstract
The interplay of different photoluminescence degradation mechanisms in InGaAlP light emitting diode structures is studied. We investigate the dependence of the photoluminescence degradation behavior on different stress and detection laser power densities. The aging experiments are carried out in an optical overstress setup via high power laser excitation. The experimental data are analyzed by a multicomponent defect evolution approach. Simultaneous growth and annealing of different kinds of defects during the photoluminescence degradation of the device are described by individual characteristic time constants for each of the defect evolution processes. This defect evolution approach is combined with a rate equation model covering radiative and non-radiative processes in the active layer as well as leakage effects into the confining layers.
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