Abstract
In this paper we investigate quantum confinement and electron-electron correlation in silicon deformed quantum wires. Starting from the single-particle picture, which shows the possibility of localizing one electron inside the wire deformation, we build a variational ansatz for the two-electron ground state. We compare the localizing effect induced by the deformation with the Coulomb repulsion, pointing out the existence of a two-electron confined ground state, depending on the wire geometry. On varying the geometrical parameters characterizing the wire deformation, it is possible to switch from structures dominated by the localization to structures in which the increase of the available volume makes the Coulomb contribution very relevant, as for ordinary quantum dots. The effects induced by the dielectric mismatch between the wire and the surrounding medium are included and discussed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
