Abstract

We study the modulation of electro-optic effect (EOE) and third-order nonlinear optical susceptibility (TONOS) of impurity doped quantum dot (QD) under the influence of position-dependent dielectric screening function (PDDSF) in presence and absence of noise. The profiles of above nonlinear optical (NLO) properties have been analyzed as a function of incident photon energy using both static dielectric constant (SDC) and PDDSF. Noise function assumes a Gaussian distribution and applied to the system additively as well as multiplicatively. Critical comparison between the profiles of above NLO properties using SDC and PDDSF has been conducted to appreciate the role of the latter. In addition, the role of mode of application of noise (additive/multiplicative) on the said profiles has also been analyzed. The profiles are found to display shift of peak position and amplification of peak value under different conditions. The observations reveal subtle interplay between noise and PDDSF in tailoring the intricate features of EOE and TONOS profiles and bear importance in the related field of research.

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