Abstract

We explore the interplay between ferroelectricity and metallicity, which are generally considered to be contra-indicated properties, in the prototypical ferroelectric barium titanate, BaTiO3. Using first-principles density functional theory, we calculate the effects of electron and hole doping, first by introducing a hypothetical background charge, and second through the introduction of explicit impurities (La, Nb and V for electron doping, and K, Al and Sc for hole doping). We find that, apart from a surprising increase in polarization at small hole concentrations, both charge-carrier types decrease the tendency towards ferroelectricity, with the strength of the polarization suppression, which is different for electrons and holes, determined by the detailed structure of the conduction and valence bands. Doping with impurity atoms increases the complexity and allows us to identify three factors that influence the ferroelectricity: structural effects arising largely from the size of the impurity ion, electronic effects from the introduction of charge carriers, and changes in unit-cell volume and shape. A competing balance between these contributions can result in an increase or decrease in ferroelectricity with doping.

Highlights

  • Ferroelectricity and metallicity are generally considered to be contra-indicated properties since the metallic charge carriers screen the long-range interactions that favor the ferroelectric structural distortion.[1]

  • Our results suggest that the factors contributing to the polarization change can be divided into three effects: (i) the chemistry and size of the impurity atom, (ii) the charge carriers and their degree of localization, and (iii) changes in tetragonality and volume

  • We find that the contributions from the impurity atom, the charge carriers and the free lattice constants are additive

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Summary

Introduction

Ferroelectricity and metallicity are generally considered to be contra-indicated properties since the metallic charge carriers screen the long-range interactions that favor the ferroelectric structural distortion.[1] These two properties can be combined in systems where the interaction between the itinerant electrons and the polar distortion is weak, as shown theoretically by Anderson and Blount in 1965. Using first-principles density functional theory, we address the question of how the ferroelectric B-site off-centering and the likelihood of polarization switchability are affected by metallic charge carriers in BaTiO3. We investigate both electron and hole doping in BaTiO3 first through the background-charge method and subsequently by introducing explicit dopants (La, Nb, V, K, Al and Sc). The dopants are chosen based on experimental feasibility and allow us to separate the effects of dopant size, substitution site as well as second-order Jahn–Teller (SOJT) activity on the polarization

Computational method
Introduction of background charge into a BaTiO3 unit cell
Introduction of impurity atoms in BaTiO3 supercells
Conclusions
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