Abstract
Au-TiBx-AuGe-n-GaP ohmic contacts have been investigated before and after rapid thermal annealing at T = 723, 773, and 873 K for 60 s in a hydrogen atmosphere. It is shown that the contact resistivity decreases with an increase in temperature in the range 77–232 K due to the thermionic nature of current flow in inhomogeneous ohmic contacts, while in the range 232–386 K the contact resistivity increases, which can be related to the conduction through metal shunts.
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