Abstract

The strong anisotropic electrical properties of one-dimensional (1D) nanostructure semiconductors, especially the anisotropic carrier transport, have a negative and significant influence on the performance of solar cells if the nanostructures have random orientation. Considering the advantages of nanorod solar cells in carrier transport, we have achieved growth of vertically aligned Sb2Se3 nanorod array with highly (hk1) orientation on CdS substrate, and constructed superstrate nanorod solar cells for the first time. The Sb2Se3 nanorod array solar cells exhibit the more efficient and long-range carrier transport in vertical direction. Furthermore, in order to suppress interface recombination, a CuInSe2 quantum dots (QDs) sensitizer has been applied to fill the volume between the nanorods completely, thus forming an interpenetrating nanocomposite structure. The CuInSe2 QDs can harvest additional light by absorption of visible light and contribute photocurrent. Meantime, the QDs function as a hole transport material and thus reduce the dependence of lateral transport. Consequently, the interpenetrating nanocomposite CuInSe2/Sb2Se3 solar cells display a power conversion efficiency of 7.54% with significant enhancements in the short-circuit current density and open-circuit voltage over pure Sb2Se3 nanorod cells. This is the highest efficiency for superstrate solar cells based on Sb2Se3 nanorod arrays.

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