Abstract
This paper presents a discussion on internal stress generation in CoSi2 films formed by rapid thermal annealing (700–900° C). The internal stress is measured by X-ray diffractometry. The internal stress is 1.1–1.3 GPa, and is almost independent of the annealing temperature. This is in contrast with the fact that the internal stress of TiSi2 films increases with the annealing temperature. This contrast is attributed to the fact that thermal stress of CoSi2 films relaxes during cooling, while in TiSi2 films the thermal stress contributes to the internal stress without relaxing.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.