Abstract
The Stark broadening by inhomogeneous electric fields in highly compensated p -type InSb has been studied through far-infrared absorption measurements. In particular, we have paid attention to the time-resolved absorption spectrum for acceptors under pulsed photoexcitation. It is found that the full width at half maximum (FWHM) for the absorption line increases as the lapse of time after photopulse excitation increases. In explanation of the broadening mechanism due to the Stark effect by electric field arising from inhomogeneous distribution of the ionized impurities around neutral acceptors, we have employed the approach based on the Monte Carlo simulation. The inhomogeneity of the field-distribution becomes larger with increasing the ionized impurities. This theoretical calculation gives fairly good agreement with the observed broadening of the FWHM in spectrum.
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