Abstract
The stimulated emission (ηist) of InGaAsP/InP separate-confinement double heterostructure lasers operating at λ=1.5–1.6 µm has been studied experimentally and theoretically. Laser heterostructures with a varied design of the waveguide layer were grown by MOCVD. The maximum internal quantum efficiency ηist≈97% was obtained in a structure with a double-step waveguide characterized by minimum leakage into the p-emitter above the generation threshold. The high value of ηist is provided by low threshold and nonequilibrium carrier concentrations at the interface between the waveguide and p-emitter. The calculation yields ηist values correlating well with the experimental data.
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