Abstract
Internal quantum efficiency values at room temperature are given for single-heterojunction Zn-diffused GaAs diodes with substrate doping concentrations of ∼1×1018 and (2–3) ×1017/cm3. The internal quantum efficiency temperature dependence for diodes with a substrate doping concentration of (2–3) ×1017/cm3 is also given in the range 200–323 K. Internal quantum efficiency values have been calculated from external quantum efficiency measurements. The conditions under which these calculations are possible have been established. Internal quantum efficiency is found to be ∼60% at room temperature, for diodes with a substrate doping concentration of ∼1×1018/cm3. Internal efficiency variations of ∼60% are observed as we go from 323 to 223 K, for diodes with substrate doping concentrations of (2–3) ×1017/cm3.
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