Abstract
By die-attaching GaN-based light-emitting diodes (LEDs) on Si substrates with eutectic AuSn solder, the external quantum efficiency of the LEDs was enhanced by 3.5% at a current input of 120 A/cm 2 . The enhancement of the external quantum efficiency of the die-attached LED chips is attributed to a reduction in compressive stress and piezoelectric fields in quantum wells after eutectic AuSn die-attachment. Raman and photoluminescence analyses were used to estimate the reduction in compressive stress and piezoelectric field in quantum wells, which is 277.8 MPa and 0.056 MV/cm, respectively, after AuSn die-attachment.
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