Internal quantum efficiency and optical polarization analysis of InGaN/GaN multiple quantum wells on a ‐plane GaN

E Y Lin,J D Tsay,T Y Lin,P X Peng,C Y Chen,T S Lay,T C Wang

doi:10.1002/pssc.200778461

Internal quantum efficiency and optical polarization analysis of InGaN/GaN multiple quantum wells on a ‐plane GaN

E Y Lin, J D Tsay + Show 5 more

https://doi.org/10.1002/pssc.200778461

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Journal: physica status solidi c	Publication Date: May 1, 2008
Citations: 4

Affiliation: National Sun Yat-sen University, Industrial Technology Research Institute

#Plane GaN #Anisotropic Polarization + Show 8 more

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Abstract

AbstractInternal Quantum Efficiency (IQE) and anisotropic optical polarization of InGaN/GaN multiple quantum wells (MQW) grown on a ‐plane (11‐20) GaN film were investigated in comparison with c ‐plane (0001) InGaN/GaN LED samples. In the temperature‐dependent and power‐dependent photoluminescence (PL) spectra, the IQE for a ‐plane and c ‐plane InGaN/GaN MQW were obtained. The anisotropic polarization has an angle of 120o between the maximum and minimum components for the a ‐plane InGaN/GaN MQW. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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