Abstract
We report the first detailed measurements of the distribution of the interface states on Al/a-Si:H interface as well as their electron-capture cross-sections by using the technique of internal photoemission current transient spectroscopy (IPECTS). The result shows that the profile of the interface state distribution is similar to that of the bulk gap state distribution.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have