Abstract
The electric field and temperature dependence of the quantum gain associated with the internal photoemission of holes from CdS and CdSe into poly(N-vinyl carbazole), i.e., PVK, are discussed in terms of a simple model of energy-loss scattering by holes near the PVK surface. Excellent qualitative agreement is obtained between simple analytical expressions derived on the model and data on CdS-PVK and CdSe-PVK.
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