Abstract
As-received P/P + (100) epitaxial silicon wafers were heat treated using the one-, two-, and three-step internal gettering heat treatment cycles in wet oxygen, dry oxygen, and nitrogen ambients. The results indicate that ambients have an effect on the growth of bulk defects and denuded zone formation in the epitaxial silicon wafers.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
