Abstract
The results of a comparative literature analysis of internal electrical noises and signal-to-noise ratio for nanoscale BioFET (biological field-effect transistor) and DNA (deoxyribonucleic acid) sensors based on different architectures MIS (metal-insulator-semiconductor), EIS (electrolyte-insulator-semi-conductor) and ISFET (ion-selective field-effect transistor) are presented. Main types, models and mechanisms of internal noises of bio- & chemical field-effect based sensors are analyzed, summarized and presented. For the first time, corresponding detail electrical equivalent circuits were built to calculate the spectral densities of noises generated in the active part of a solid (semiconductor, dielectric) and in an aqueous solution for MIS, EIS and ISFET structures based sensors. Complete expressions are obtained for the rms (root mean square) value of the noise current (or voltage), as well as the noise spectral densities for the architectures under study. The miniaturization of biosensors leads to a decrease in the level of the useful signal-current. For successful operation of the sensor, it is necessary to ensure a high value of the SNR (signal-to-noise ratio). In case of weak useful signals, it is necessary to reduce the level of internal electrical noise. This work is devoted to a detailed study of the types and mechanisms of internal electrical noises in specific biosensor architectures.
Highlights
The results of a comparative literature analysis of internal electrical noises and signal-to-noise ratio for nanoscale BioFET and DNA sensors based on different architectures MIS, EIS and ISFET are presented
For successful operation of the sensor, it is necessary to ensure a high value of the signal-to-noise ratio (SNR)
The noise analysis of BioFETs so far performed in different literature relates only to sources originated from FET structure which is almost constant for a particular device, the pH-dependent electrochemical noise has not been substantially explored and analyzed in detail
Summary
Only large scattering strengths, as compared to the energetic gap between the molecular states and the Fermi level, significantly alter the form of the current distributions Since this gap itself is quite large, the current distributions remain protected from this type of noise, further supporting the possibility of using transverse electronic transport measurements for DNA sequencing. The statistical and frequency analysis of this electrochemical noise of a commercial ISFET sensor, under room temperature has been performed for six different pH values ranging from pH2 to pH9.2 It is proposed a concentration dependent a f and b f 2 model of the noise with different values of the coefficients a and b. In [24] the small-signal and noise modeling of BioFET sensors implemented with EIS structures is studied, with emphasis on design guidelines for low-noise performance. Note that BioFETs several structures (ISFET, EIS, etc.) tend to be operated at low frequencies, where 1 f -noise is dominated, our main attention in the parts of the paper will be focus mainly on low frequency noise
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