Internal Electric Field Estimation, Charge Transport and Detector Performance of As-Grown ${\rm Cd}_{0.9}{\rm Zn}_{0.1}{\rm Te:In}$ by THM

Abstract

In this article we report the evaluation of thick (up to 10 mm) as-grown Cd <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.9</sub> Zn <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.1</sub> Te(CZT):In detectors fabricated from ingots grown by traveling heater method (THM). The crystals were investigated by mapping the electron mobility (μ <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">e</sub> ), (μτ) <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">e</sub> and the internal electric field of as-grown CZT samples. The detector performance was also evaluated in co-planar grid geometry. The excellent (μτ) <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">e</sub> value and the detector performance of 10 mm thick as-grown detectors is the indication that the THM technique can be employed successfully to fabricate the detectors directly from the as-grown boule at substantially lower cost.