Abstract

A relationship is described between the intermodulation distortion (IMD) performance of a parallel MESFET switch to the device's experimentally extracted higher order derivatives. As the third-order Ids(Vgs, Vds) Taylor-series coefficients support a non-optimum linearity in cold FET operation (VDS = 0 V), a small drain-to-source voltage ‘sweet spot’ has been found for IMD reduction, giving a useful bias point for highly linear switching applications without degrading attenuation.

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