Abstract
This study proposes a power amplifier with the various collector voltages technique to linearize the power amplifier. The third-order intermodulation term in the behavior model of the power transistor is analyzed to demonstrate the minimum third-order intermodulation distortion for the power amplifier with the various collector voltages technique. This various collector voltages technique for reducing the third-order intermodulation distortion of the power amplifier is experimentally and theoretically verified. A SiGe BiCMOS power amplifier with the various collector voltages technique is designed and implemented. Results demonstrate that the linear output power of the proposed power amplifier is 2.3 dB higher than the power amplifier with the fixed supply voltage.
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