Abstract
This study introduces a novel method to measure C( V) characteristics of local MOS structures based on scanning probe microscopy (SPM) techniques. The new method operates in intermittent-contact (IC) mode and combines both the advantages of contact mode C( V) spectroscopy and intermittent-contact scanning capacitance microscopy. As a consequence, on the one hand dopant concentration and dopant type can be indicated simultaneously, on the other hand tip wear is reduced significantly.
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