Abstract
Analogue lithography is a suitable technology for the fabrication of continuous surface profiles. This paper summarises investigations on the electron beam exposure of PMMA and HEBS-glass masks. At first we give an idea of the intermittence effect we obtained by exposing PMMA and HEBS-glass masks with a variable shape beam e-beam writer. To understand its physical causes, the intermittence effect was investigated in detail and could be described by a simple model. The consequences of the effect for different e-beam writing concepts (Gaussian beam and variable shape beam) are compared. Based on this knowledge we introduce a strategy to overcome problems in variable shape beam writing.
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