Abstract

In this paper, the directional growth behavior of Sn whiskers was found to be associated with the interfacial γ-Ag2Al IMCs at Sn-3.5Ag/Al interface. A 100 μm thick columnar structured Sn-3.5Ag coating consisted of β-Sn phases and γ-Ag2Al phases was fabricated on Al substrate. The as-formed interfacial IMCs between Sn-3.5Ag and Al were confirmed as γ-Ag2Al and μ-Ag3Al. After aging treatment, the growth direction of Sn whiskers was found to be consistent. μ-Ag3Al phases transformed into γ-Ag2Al. The newly formed hexagonal γ-Ag2Al grew out of the IMCs layer and provided the out-of-plane stress for whisker growth. Ag atoms diffused into Sn sub-grain boundaries and formed γ-Ag2Al IMCs leading to the formation of in-plane stress. The c-axis of the β-Sn and γ-Ag2Al is parallel, leading to the similar growth direction of the whiskers. The misorientation between the whisker and the underneath grain was lower than 2°. A transitional area formed between the whisker and underneath grain, which consists of extra half-planes of atoms. A mathematical model was proposed to calculate the heterogeneous distribution of Ag atoms. By comparing the calculated growth rate with the measured growth rate of whisker, the Sn atomic transport mode was pipe diffusion.

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