Abstract
The design of multilayer oxide films heterojuctions for photoanodes enables the control of charge transport/transfer and optical properties, and thus leads to efficient photoelectrochemical performance. In this research, a SnO2/Mo-doped BiVO4/ based photoanode was fabricated by sequential spin coating method on an FTO substrate followed by thermal treatment. First, bottom SnO2 layers were deposited, and subsequently Mo doped BiVO4 layers were loaded. When Mo doped BiVO4 layers were coated, intermediate evaporation was controlled by varying temperature condition for a formation of uniform crystalline film, allowing an improved charge separation. The synthesized photoanodes were examined by SEM, TEM, XRD, UV-vis as well as electrochemical measurements.
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