Abstract

Fe/MgO/Fe trilayers with a subnanometer MgO tunnel barrier were grown by molecular beam epitaxy. Longitudinal magnetooptic Kerr effect measurements confirmed the existence of the antiferromagnetic interlayer exchange coupling (IEC) between the Fe layers for 2Å<dMgO<6Å. The coupling was enhanced for the trilayer grown on a homoepitaxial MgO buffer layer, and its IEC constant was estimated to be −3.3erg/cm2 at a MgO thickness of 2.7Å. After magnetic characterization, the sample was patterned into circular-shaped pillars with diameters ranging from 200nm to 520nm. We showed that the dipolar coupling that appeared after the nanofabrication process modified the effective coupling between layers, and we determined dependence of the dipolar coupling on the pillar diameter. Finally, magnetoresistance (MR) was measured as a function of MgO thickness (dMgO), and a non-zero MR was found for the MgO as thin as 3.4Å. Extrapolation of the MR (dMgO) dependence to MR=0 allowed us to determine the length of the pinholes in our sample, which was estimated to be (3.2±0.5)Å.

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