Abstract
The combinations of magnetic materials with traditional semiconductors are interesting possibilities for new magnetoresistive structures. In this work the interlayer magnetic coupling in Co-Si systems has been studied. The coupling has been calculated within the density-functional theory, and it has been observed to oscillate with a spatial period of two Si layers. The electronic structure analysis indicates the formation of quantum wells within the Si spacer.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have