Intergrowth Bismuth Layer-Structured Na0.5Bi2.5Nb2O9–Bi4Ti3O12 High Temperature Ferroelectrics Ceramics

Abstract

Intergrowth superlattice structural Na0.5Bi2.5Nb2O9–Bi4Ti3O12 (NBN–BIT) ceramics were synthesized by solid-state reaction method. In the temperature dependence of dielectric permittivity, two anomalies appeared at 663 and 780 °C, respectively. The dielectric loss tan δ of the NBN–BIT ceramics was very low, especially from room temperature to 400 °C. The ferroelectric hysteresis loop measurement revealed P r and E c of NBN–BIT ceramics are 10.5 μC/cm2 and 18.5 kV/cm, the P r nearly as twice as that of the NBN ceramics. The results show that ferroelectric properties of NBN–BIT ceramics increase comparing with pure NBN, and NBN–BIT ceramics are promising candidate materials for high temperature applications.