Abstract

The interference in the photodetachment of a negative hydrogen ion near two perpendicular elastic surfaces has been studied using the theoretical imaging method. Firstly, we analyze the images of the detached electron caused by the surfaces. Then we put forward an analytic formula for calculating the detached electron probability density and electron flux distribution at a given observation plane. Due to the influence of the two perpendicular elastic surfaces, four detached electron waves which propagate from the ion source to the same point on the detector plane will interfere and lead to an interference pattern in the electron's probability density and flux distribution. Our calculation results suggest that the electron flux distributions on the detector plane are not only related to the electron energy, but also are related to the position of the ion relative to the surfaces. Compared to the photodetachment of a H^- ion near one elastic surface, the oscillatory structure in the flux distribution of our system becomes much more complicated. This study provides a new understanding of the photodetachment process of negative ions in the vicinity of surfaces and may guide future research in photodetachment microscopy experiments.

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