Abstract
The reflectance spectroscopy is performed at 77 K on ZnSe epilayers of different thicknesses grown on GaAs substrates. The exciton line shapes of the reflectance spectra change dramatically with the epilayer thickness. This observation suggests that the interference effects between the reflected waves from the surface and from the interface play an important role on the exciton line shape of the reflectance spectra. To analyze the change in the exciton line shapes quantitatively, the reflectance spectra were calculated using a simple oscillator model for a dielectric function and considering a multiple reflection. Calculated line shapes of the reflectance spectra show good agreement with the observations.
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