Abstract
Aligned ferroelectric single crystals of (3-pyrrolinium)(CdCl3 ) can be prepared from solution on top of aligned semiconducting C60 single crystals using an orthogonal solvent. Memory devices based on these ferroelectric/semiconductor bilayered heterojunctions exhibit much larger hysteresis compared with that of only C60 single crystals. More importantly, the introduction of the ferroelectric layer induces the memory window without dramatically reducing the charge mobility.
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