Abstract
Diamond/SiC composites have attracted considerable research interests due to their outstanding properties sought for a wide range of applications. Among a few techniques used for the fabrication of diamond/SiC composites, molten Si infiltration is an approach highly favored due to its cost-effectiveness and process flexibility. This study critically evaluated the interfacial zone surrounding the diamond in a reaction bonded (RB) diamond/SiC composite. XRD suggests that the composite consists of diamond, α-SiC, β-SiC, Si, and graphite. TEM reveals that a thin layer of graphite surrounds the diamond grain and it appears to form through a process of diamond graphitization and amorphous carbon transformation during the fabrication. In addition, a carbon dissolution and saturation process is proposed as a predominant mechanism for the formation of nano-crystalline SiC near the interface as well as the defects inside the SiC grits. A minor Al4C3 phase is occasionally detected near the interface region.
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