Abstract
Molecular simulations are used to evaluate thermal resistance between crystalline silicon and a vertically oriented carbon nanotube (CNT). Without chemical bonds between CNT and Si the thermal resistance is high and its values are consistent with that measured in experiment on vertical CNT arrays. With chemical bonds the thermal resistance is reduced by two orders of magnitude demonstrating significant potential of CNT arrays for thermal management applications. The underlying mechanism for the very large effect of chemical bonding is revealed by simulations of individual phonon scattering across the interface and understood within an analytical solution of a simple spring-mass chain model.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
