Abstract
As an interlayer for source-drain electrodes in solution processed zinc tin oxide (ZTO) thin-film transistor, MoO3 was introduced between aluminum source-drain electrodes and oxide semiconductor. MoO3 was detected not only in the interlayer, but in the source-drain electrodes and oxide semiconductor layer. The chemical configuration and the structural configuration were confirmed by XPS interfacial study and by TEM analysis, respectively. From these analytical tools, we found that the interlayer exists as a chemically mixed state between the layers, source-drain electrodes and oxide semiconductor.
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