Abstract
A study of the temperature dependence of interfacial reactions and electrical characteristics of vacuum-deposited thin films of molybdenum on gallium arsenide single-crystal substrates was conducted and the data analyzed. The molybdenum films, which were deposited by utilizing an electron beam evaporation source, were observed to have (110) preferred orientation. Gallium outdiffusion to the exterior surface of molybdenum was detected by means of surface profiling in conjunction with Auger electron spectrometry and secondary-ion mass spectrometry analyses. The formation of binary compounds Mo5As4, Mo2As3, and Mo3Ga and the formation of a ternary compound with the tentative composition of Mo3GaAs2 were detected by x-ray diffraction techniques. The compound formation was found to be temperature dependent.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
