Abstract
The interfacial structure of a SiC/Al composite was investigated in order to determine whether a specific orientation relationship exists between the basal planes of α-SiC and Al and, also, to obtain evidence as to the possible existence of dislocations at the interface between SiC and Al. The interface was seen to be clean and free of any voids. Although some interfaces showed the appearance of a thick amorphous layer, most of the interfaces appeared to show a clean and continuous bond across the interface. The (112) Al planes were parallel to the basal planes of the α-SiC so that a specific crystallographic orientation was obtained at the interface. Dislocations were not observed at the interface (except for those in the matrix that had been generated due to the difference in the coefficients of thermal expansion).
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
