Abstract
Conductance and magnetoresistance of spin-polarized semi-metal(GdAs)/semiconductor(GaAs) junctions are calculated by using a full-orbital tight-binding scheme and the linear response theory. It is shown that the magnetoresistance as well as conductance are strongly influenced by the presence of interfacial states. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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