Abstract
A lattice-mismatched ZnTe epilayer on a GaAs (100) substrate was grown by the simple method of temperature-gradient vapor deposition. From the x-ray diffraction analysis, the grown layers were found to be ZnTe epitaxial films. The stoichiometry of the ZnTe films was investigated by Auger electron spectroscopy. Transmission electron microscopy measurements showed that there was a large lattice mismatch between the ZnTe epitaxial layer and the GaAs substrate. These results indicate that ZnTe epitaxial films grown on GaAs substrates at 320 °C have no significant interdiffusion problems, and that pseudomorphic, fully strained ZnTe layers are observed for deposits after ten molecular layers.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
