Abstract
AbstractWe have experimentally demonstrated that the interface between ITO and Si or Si0.85Ge0.15 is metastable, with silicon reducing ITO to form an amorphous oxide layer and In metal. A 400nm-thick ITO layer was deposited on two types of substrates: p-type, <100> silicon wafers and a silicon wafer with a 400nm-thick layer of Si0.85Ge0.15 grown by CVD. Annealing of the ITO/Si system resulted in the growth of a 5nm-thick planar, interfacial SiO2 layer and the formation of In metal in the ITO above the SiO2 layer. In contrast, annealing of the ITO/Si0.85Ge0.15 system produced an interfacial Si0.85Ge0.15O2 layer that was non-uniform in thickness and which had a non-planar surface morphology. As-deposited and annealed samples were characterized by HREM, EDS, and C-V measurements. Thermodynamic and kinetic arguments predicted both of the different reaction paths that were observed in the two systems.
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