Abstract
The discovery of ferroelectricity in hafnium zirconium oxide (HZO) thin films has attracted wide attention from academia to industry due to the application in ferroelectric non-volatile random access memories (FeRAM) with prominent performance in scalability and CMOS process compatibility. Dielectric behavior of ferroelectric HZO thin films is a key factor affecting the dynamic effect, piezoelectric and electrostrictive effect. Interface between HZO and capping electrodes plays an important role in regulating the dielectric properties. In this paper, the impedance frequency response and dielectric spectrum of ferroelectric HZO thin films were analyzed. Parameters of the interface were extracted to analyze the regulating effect on the dielectric properties based on an impedance model with constant phase element (CPE). Besides, dielectric spectrums at elevated temperatures were identified to verify this analysis.
Highlights
I N recent years, the amount of data needed to be stored has been increasing at a geometric level, which puts forward new and higher requirements for memory technologies
Impedance parameters of the corresponding devices at elevated temperatures were given as well in order to improve the manufacturability of ferroelectric hafnium zirconium oxide (HZO) thin films in practical applications
To analyze the dielectric properties of ferroelectric HZO thin films, 20-nm-thick Hf0.5Zr0.5O2 was prepared by atomic layer deposition (ALD) method
Summary
I N recent years, the amount of data needed to be stored has been increasing at a geometric level, which puts forward new and higher requirements for memory technologies. Studies have shown that the interface between HZO and capping electrodes has impact on dielectric properties [8] - [10]. It is of great significance to analyze the influence of interface and optimize the dielectric properties of ferroelectric HZO films.
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