Abstract

Bi2(Te1−xSex)3 is an important kind of n-type thermoelectric material. In this study, interfacial reactions at 250°C in the Sn/Bi2Te3, Sn/Bi2Se3 and Sn/Bi2(Te1−xSex)3 couples are examined. In the Sn/Bi2Te3 couple, the reaction zone is found to be non-planar and the reaction path is liquid/(liquid+SnTe)/Bi2Te3. But with only 2.0at.%Se addition to the Bi2Te3 substrate, very different reaction results are observed. In the Sn/Bi2(Te1−xSex)3 couple, the reaction layers are planar, and the reaction path is liquid/SnTe/BiTex/Bi2(Te1−xSex)3. In the Sn/Bi2Se3 couple, the reaction layers are also planar, the reaction path is liquid/SnSe/BiSe/Bi2Se3, and the Bi content in the SnSe phase varies. The growth rates in the Sn/Bi2Te3 couples are very fast, and the reaction layer is as thick as 1174μm in just 15min. Very dramatic reduction of growth rates has been observed with Se addition to the substrates, and the reaction layer is only 9μm in the Sn/Bi2(Te2.9Se0.1) couples after reaction for 30min.

Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call