Abstract
A unique parallel-to-vertical alternating layer microstructure is observed in the In/Ag2Se couples reacted at 723 K (450 °C). The reaction zone has two different regions. Both regions are composed of liquid and In4Se3 phases. The region adjacent to the Ag2Se substrate has alternating-layer structure, and the layers are aligned parallel to the reaction zone/Ag2Se interface. The phase growth direction changes abruptly in the other region and is nearly vertical at the end adjacent to the parallel region.
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